NTD5804N, NTDV5804N
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D ? 01
ISSUE C
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
1
4
2
3
A
Z
DIM
A
B
C
D
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
? T ?
SEATING
PLANE
F
G
K
J
D 3 PL
0.13 (0.005)
M
T
H
E 0.018 0.023
F 0.037 0.045
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.180 0.215
S 0.025 0.040
V 0.035 0.050
Z 0.155 ???
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
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NTD5804N/D
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相关代理商/技术参数
NTD5805N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805N_12 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N.Channel, DPAK
NTD5805NG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805NT4G 功能描述:MOSFET NFET DPAK 40V 51A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5806N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NT4G 功能描述:MOSFET NFET DPAK 40V 33A 19mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5807N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK